Abstract: The exploration of Venus, Mars and other planetary space has put forward rigorous challenge for resistance of high temperature, radiation and corrosion of spacecraft electronics system. Extreme environment electronics for cryogenic temperature and high temperature is gaining a high demand in the field of deep space exploration during the past decade. In the paper, we briefly reviewed the history and research status of high-temperature SiC IC including the digital, analog and power IC. The main design methods of high-temperature SiC IC and two technical approaches for their wafer verification are mainly reviewed and analyzed. The two approaches are, first, BJT device unit based on multilayer epitaxial process and its integrated circuits; second, the complementary unit based on ion implantation doping process and its CMOS circuits. Additionally, long-term reliability verification for high temperature SiC sensor chip, BCD power IC and power module are briefly summarized. The reported research achievements for the development of SiC BJT and CMOS IC around the globe clearly indicated the collaborative innovation pattern between the university academia and semiconductor fab enterprises. Finally, we look into the future of their potential applications and the main challenges of deep space exploration mission. This review provides valuable reference for domestic research to develop high temperature integrated circuits based on wide-bandgap semiconductor SiC and its electronic system used for space environment.