Abstract: The problems of film peeling and crater often appeared in bonding wire bonding on silicon chip. The influence is analyzed from the bonding pad structure, bonding wire material, bonding parameters and bonding sequence. Improper pad hardness and thickness will cause craters, which should be paid special attention during wire bonding. For bonding wires, in addition to elongation and tensile strength, wire hardness should also be concerned. For bonding parameters, parameters should be optimized for different chips and bonding wires to achieve the best bonding effect and bonding quality. The research provides a solution for the optimization of silicon aluminum wire bonding process.