Abstract: In this paper, high-performance AlGaN/GaN HEMTs were prepared with regrown ohmic contact by MOCVD. The device shows a low ohmic contact resistance of 0.16Ω·mm and good thermal stability in the temperature range of 100K to 425K. Due to the low-resistance ohmic contact, the output current density is 1350mA/mm, the transconductance peak is 372mS/mm, the on-resistance is 1.4Ω·mm and the knee voltage is 1.8V of the AlGaN/GaN HEMTs with Lsd of 2μm and Lg of 100nm. In addition, the device exhibits excellent RF characteristics. The current gain cut-off frequency fT is 60GHz, and the maximum oscillation frequency fmax is 109GHz. At 3.6GHz with VDS of 15V and 30GHz with VDS of 20V, the device achieves power-added-efficiency of 67.1% and 43.2%, output power density of 3.2W/mm and 5.6W/mm, respectively. This shows that the MOCVD-ohmic regrown HEMTs has great potential in the application of Sub-6G and millimeter wave band.