Abstract: This paper provides a comprehensive review of the latest research advancements in silicon-based complementary metal-oxide-semiconductor (CMOS) terahertz (THz) detectors. By analyzing how transistors can exceed the traditional upper limits of cut-off frequencies to enable detection in the THz band detection, it showcases the technical potential of CMOS THz detectors and their broad prospects in both theoretical research and practical applications. Given the importance of THz technology in security screening, wireless communication, and medical imaging, this study aims to reveal how CMOS THz detectors meet the challenges of high-performance detection demands in these areas through technological innovation and design optimization. Initially, the working principles and classical models of the detectors are discussed, with the article meticulously organizing the current key modeling approaches for THz detection technology, laying a foundation for understanding and enhancing detection performance. Subsequently, the paper explores various methods to enhance the performance of detectors, including the adoption of novel asymmetric structural designs and process improvements, showcasing the potential pathways for performance enhancement through innovative design and technical optimization. Additionally, the paper introduces the integration technology of THz detectors and readout circuits, which has realized the design of miniaturized THz cameras. This advancement not only reduces the device size but also enables THz cameras to achieve video stream imaging functionality. Finally, this article looks forward to the future development of THz detection and imaging system technology, particularly emphasizing the importance of miniaturization and sensitivity enhancement, aiming to foster broader research efforts and technological innovation.