硅基毫米波太赫兹倍频器研究进展

    Research on silicon-based millimeter-wave terahertz frequency multiplier

    • 摘要: 硅基集成毫米波太赫兹源依靠高集成度、低成本以及与数字集成电路兼容的优势,成为了下一代6 G高速通讯、高精度态势感知雷达和超高分辨率成像等毫米波太赫兹应用的一大重要支撑。对其中的关键非线性电路倍频器的国内外研究进展进行了调研和总结,具体包括对硅基毫米波太赫兹倍频器的拓扑分类和适用场景进行了详细的梳理。同时,对近几年应用于优化谐波产生的晶体管非线性理论的研究进行了列举。最后,对硅基毫米波太赫兹倍频器研究的未来做出了展望,为倍频器的相关研究者们梳理了清晰的研究路线。

       

      Abstract: Relying on the high level of integration, cost-effectiveness, and compatibility with digital integrated circuits, silicon-based integrated millimeter-wave terahertz sources have become indispensable for applications such as next-generation 6 G high-speed communications, high-precision situational awareness radar, and ultra-high-resolution imaging. This paper investigates and summarizes the progress of domestic and international research on key nonlinear circuit frequency multipliers. It provides a comprehensive overview of topological classifications and applicable scenarios of silicon-based millimeter-wave terahertz frequency multipliers. Furthermore, recent advancements in transistor nonlinear theory applied to optimize harmonic generation are discussed. Finally, an outlook is provided for the future development of silicon-based millimeter-wave terahertz frequency multipliers along with a clear research roadmap for related researchers.