基于GCPW的220GHz砷化镓芯片基波混频电路
220GHz GaAs fundamental mixer circuit design based on GCPW
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摘要: 为了提高太赫兹收发系统的集成度,设计并制备了220 GHz基于共面波导输出接口的片上砷化镓基波混频电路。首先,对研制的砷化镓肖特基二极管的I-V和C-V进行测试表征,并提取了相应的肖特基二极管电路参数。其次,分别设计了串联肖特基二极管、低通滤波器、3 dB耦合器等结构,并对其进行了联合仿真,实现了220 GHz混频基波电路。最后,通过优化整合工艺,采用二极管倒装的形式封装在电路上形成片上混频器。对研制的混频电路进行了测试验证:在固定中频5 GHz的条件下,测试结果表明在200 GHz~220 GHz频率范围内芯片的变频损耗均小于15 dB,在204 GHz处获得了最低损耗10.6 dB。基于GCPW的砷化镓芯片电路结构简单,无需波导腔体装配,可以与其他射频器件集成在一起,减小芯片体积,增加集成度。Abstract: To enhance the integration of terahertz transceivers and reduce the size, a 220 GHz fundamental mixier based on ground coplanar waveguide(GCPW)GaAs circuit is designed and fabricated. At first, the I-V and C-V curves of the GaAs Schottky diode are measured, then the parasitic parameters of the Schottky diode are determined. The Schottky diode, filter, and 3 dB couplerare are designed individually and simulated jointly, achieving a 220 GHz mixer circuit.By optimizing the integration process, the diode is flip-chip bonded to the circuit, facilitating the GaAs mixer circuit. The measured result shows that under the condition of a fixed intermediate frequency of 5 GHz, the conversion loss is better than 15 dB in the frequency range of 200 GHz~220 GHz and the minimum conversion loss is 10.6 dB at 204 GHz.The GaAs circuit on GCPW is simple, eliminating the need for waveguide cavity assembly. It can be integrated with other radio frequency devices to reduce the volume.