A w-band wideband low noise amplifier MMIC based on 0.1 μm gallium nitride technology

The paper presents a novel broadband low noise amplifier (LNA) designed using 0.1 µm GaN low-voltage technology, targeting high-performance requirements in various applications, including high-speed wireless communication, instrumentation, automotive radar, and security imaging. Operating within the W-band 75 GHz~110 GHz, the LNA's design integrates a cascaded push-pull configuration with a 1∶1∶1∶2 ratio, optimizing linear gain and noise performance. By leveraging link analysis to balance the chip’s linear, nonlinear, and noise models, the amplifier minimizes power consumption while achieving a favorable noise figure and 1 dB compression output power. The assembled low-noise amplifier chip, following probe-on-chip and fixture testing, operates at a static working current of 50 mA with a drain voltage of +5 V and gate voltage of −0.7 V. Actual tests reveal a small signal gain of 21 dB and a noise figure of 3.5 dB in the 75 GHz~110 GHz frequency band. The compact chip size is 2.3 mm × 1.5 mm × 0.05 mm.